JA Solar has reached agreement with Shin-Etsu Chemical of Japan to license its 
intellectual properties of using Ga-doped silicon wafers for solar cell 
applications. Shin-Etsu Chemical holds a number of patents on doping Ga in 
silicon crystals and using the Ga-doped p-type crystalline silicon wafers for 
making solar cells. An official ceremony of signing the agreement took place 
recently in Tokyo, Japan, has effectively granted JA Solar the IP rights over 
various nations and regions the patents covered.

It is well known that solar cells using boron doped p-type silicon wafers have 
long suffered a so-called light induced degradation (LID) upon initial light 
illumination. With the adoption of PERC cell structure in recent years, the 
problem of LID associated with solar cells made from B-doped silicon wafers 
becomes more severe. Using Ga-doped silicon wafers can effectively mitigate 
such a problem that assures the performance of PV modules assembled with p-type 
silicon-wafer based solar cells more stable and better in long-term energy 
generation.

Mr. Jin Baofang, JA Solar's Chairman of Board of Directors, commented that 
"using Ga-doped silicon wafers for solar cell application definitely results in 
better performance of solar cells and PV modules, as well as the improvement of 
their long-term reliability. Being the patent holder of several leading 
technologies including bifacial PERC technology in China and other countries, 
JA Solar has benefited from and always supports IP protection. We deeply 
appreciate Shin-Etsu Chemical granting JA Solar their IP rights of Ga-doped 
crystalline silicon technology, which is an important step for JA Solar in 
introducing advanced technology and supporting the industry's intellectual 
property protection. JA Solar will continue to develop and provide 
high-performance PV products and clean-energy solutions to our customers 
worldwide through technological innovation and continuous performance 
improvement."

SOURCE  JA Solar Co., Ltd.