Country for PR: Japan
Contributor: Kyodo News JBN
Thursday, July 15 2021 - 17:00
AsiaNet
WPI-MANA Achieves Direct Growth of Germanene, Marking Major Step for Electronic Device Fabrication
TSUKUBA, Japan, July 15, 2021 /Kyodo JBN-AsiaNet/--

A team at WPI-MANA has succeeded in the direct growth of h-BN-capped germanene 
on the surface of silver Ag(111). They believe this could be a promising 
technique for the fabrication of germanene-based electronic devices in the 
future.

(Image: 
https://kyodonewsprwire.jp/prwfile/release/M105739/202107067300/_prw_PI1fl_nJmUwabT.jpg)


The WPI-MANA group grew the germanene at interfaces of graphene/Ag(111) and 
hexagonal boron nitride (h-BN)/Ag(111) by segregating germanium atoms. A simple 
annealing process in nitrogen (N2) or hydrogen/argon (H/Ar) at ambient pressure 
led to the formation of germanene, which indicated that ultrahigh-vacuum 
conditions are not necessary in this process. The resulting germanene was 
stable in air and uniform over the entire area covered with a van der Waals 
(vdW) material.

Germanene is one of a group of elements with two-dimensional honeycomb 
lattices, such as silicene, stanene and plumbene, which are collectively known 
as Xenes. These substances have electronic properties similar to those of 
graphene, including extremely high carrier mobility. In contrast to graphene, 
however, the honeycomb-lattice crystal structure of Xenes is not flat, but 
buckled, which results in their bandgaps being controllable by applying an 
electric field. Such bandgap controllability would provide a way to overcome 
the problem of gapless graphene for future electronic device applications. 
Thus, the utilization of Xenes in electronics is highly desirable. 

In another important finding, the group discovered it was necessary to use a 
vdW material as a cap layer for their germanene growth method, since the use of 
an Al2O3 cap layer resulted in no germanene formation.

The results also prove that Raman spectroscopy in air is a powerful tool for 
characterizing germanene at an interface.

This research was carried out by Seiya Suzuki, ICYS Research Fellow 
(International Center for Young Scientists, ICYS-NAMIKI), Tomonobu Nakayama, 
Deputy Director (WPI-MANA) and their collaborators.

"Direct Growth of Germanene at Interfaces between Van der Waals Materials and 
Ag(111)"
Seiya Suzuki et al., Advanced Functional Materials (November 20, 2020)
https://doi.org/10.1002/adfm.202007038

MANA E-BULLETIN
https://www.nims.go.jp/mana/ebulletin/


Source: International Center for Materials Nanoarchitectonics (WPI-MANA), 
National Institute for Materials Science (NIMS)