Country for PR: Japan
Contributor: Kyodo News JBN
Wednesday, November 17 2021 - 18:00
AsiaNet
Fujitsu Launches New 8Mbit FRAM Guaranteeing Writing Endurance up to 100 Trillion Times
YOKOHAMA, Japan, Nov. 17, 2021 /Kyodo JBN-AsiaNet/--

Fujitsu Semiconductor Memory Solution Limited has launched new 8Mbit FRAM 
MB85R8M2TA with parallel interface, which is the first product to guarantee 100 
trillion read/write cycle times in Fujitsu's FRAM product family. Evaluation 
samples are currently available.

URL: 
https://www.fujitsu.com/jp/group/fsm/en/products/fram/device/parallel-8m-mb85r8m2ta.html


Fig.1 - MB85R8M2TA Packages:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI4fl_1D8dFJht.jpg


FRAM is a non-volatile memory product with superior features of high read/write 
endurance, fast writing speed operation and low power consumption, and it has 
been mass-produced for over 20 years.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/features/

The MB85R8M2TA with an SRAM-compatible parallel interface operates at a wide 
range of power supply voltage from 1.8V to 3.6V. Being capable of operating up 
to 25ns in fast page mode, the new FRAM's access speed is as high as SRAM at 
continuous data transfer. It achieves both high-speed operations, approximately 
30% faster access speed, and low power consumption, 10% less operating current, 
compared to Fujitsu's conventional products. This memory IC is an ideal 
replacement of SRAM in the industrial machines that require high-speed 
operation.

Fig.2 - Example of FRAM usage:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI3fl_sEuZ53MK.jpg


Fig.3 - Current Comparison:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI2fl_eSN8P9bQ.jpg


From the above features, the new 8Mbit FRAM brings customers the benefit of 
eliminating a data-backup battery necessary for SRAM in some cases.

Fig.4 - Issues and solutions when replacing SRAM with non-volatile memory:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI1fl_SfW38Sm1.jpg


Fujitsu Semiconductor Memory Solution is committed to contribution to 
sustainable society while developing high-performance products. As an example, 
the company continues working on the development of low-power consumption FRAM 
products. With the reduction of power consumption, it aims to reduce CO2 
emissions for less greenhouse gas.

Fujitsu will continue to satisfy the needs and requirements from the market and 
customers and also develop eco-friendly memory products.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly 
reliable non-volatile memory like Ferroelectric Random-Access Memory (FRAM) and 
Resistive Random-Access Memory (ReRAM). Headquartered in Yokohama, it was 
established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. 
Through its global sales and development network, with sites in Japan and 
throughout Asia, Europe, and the Americas, the company offers semiconductor 
memory solutions to the global marketplace. For more information, please see: 
https://www.fujitsu.com/jp/fsm/en/


Source: Fujitsu Semiconductor Memory Solution Limited
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