Country for PR: Japan
Contributor: Kyodo News JBN
Thursday, March 02 2023 - 17:00
AsiaNet
Floadia Completes eFlash IP Qualification on TSMC 130BCD Plus Process and Achieves World's Highest Data Retention for 10 Years at 200 C
TOKYO, Mar. 2, 2023 /Kyodo JBN-AsiaNet/ --

- Engagements with Chip Vendors to Begin Mass Production at TSMC -

Floadia Corporation (hereinafter "Floadia"), a developer of embedded flash 
memory IP cores (eFlash IP) based in the Tokyo suburb of Kodaira-shi, has 
completed qualification of its eFlash IP, G1, on the 130BCD Plus process of 
TSMC, the world's largest semiconductor foundry headquartered in Taiwan. G1 
passed the qualification criteria of data retention for 10 years at 125 C after 
10,000 program and erase operations. The same test was conducted at an even 
higher temperature of 200 C, and G1 achieves the world's highest quality level 
of data retention for 10 years.

Logo: 
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The BCD process is a process technology that enables the integration of three 
types of devices on a single chip: bipolar, CMOS, and DMOS. The BCD process 
technology gets more and more attention because it is indispensable for the 
realization of "smart power management IC." This type of IC integrates a power 
management IC, which handles high voltages and large currents, and an MCU 
(microcontroller) on a single chip. At the same time, demand for non-volatile 
memory (memory that retains data even when the power is turned off) on the BCD 
process is increasing to store programs and various parameters in the MCU.

The "hot electron injection floating gate" MTP has been regarded as the most 
promising non-volatile memory for the BCD process because it requires almost no 
additional process steps. However, this type of MTP has the risk of poor data 
retention caused by stress-induced leakage current (SILC). Failure to read data 
correctly can lead to a major quality failure. Circuit design is usually 
adopted to reduce the risk, but, in the meantime, it increases the cost due to 
the large chip size.

Floadia's G1 is a SONOS-type memory cell and it uses Fowler-Nordheim (FN) 
tunneling for program and erase operations. This offers the following 
advantages: 1) low power consumption during rewrite, 2) small IP size, 3) high 
data retention because of no SILC phenomenon, 4) only three additional masks 
required, and 5) short test and bake times. Moreover, the thermal budget of 
G1's additional processes won't affect the existing BCD devices. For this 
reason, the process design kit (PDK) provided by the foundry and the SPICE 
models (models describing the operation of transistors and passive devices) 
included in the PDK can be kept the same. As a result, chip companies can reuse 
all existing IP assets while adding G1, and thus reducing product development 
time.

With the completion of G1 qualification on the TSMC 130BCD Plus process, 
Floadia will continue to support G1-based products; G1 is suitable for wireless 
charger ICs, USB power supply ICs, motor driver ICs, and programmable 
mixed-signal ICs. Some automotive electronic control unit applications have 
adopted G1 to reduce PCB size by 60% and weight by 80% by one integrated chip 
which was previously composed of multiple discrete components.

"Our G1 was firstly used in several smartphone ICs shortly after the company 
was founded in 2011. Since then, G1 adoption has expanded to multiple foundries 
and IDMs, from consumer chips to automotive chips," said Floadia President 
Kosuke Okuyama. "We are pleased that G1's qualification on the TSMC 130BCD Plus 
process will facilitate the integration of smart power management ICs, which 
has been expected for long."

About Floadia Corporation
The company was established in 2011 by a group of experienced engineers, who 
had developed embedded non-volatile memory for more than 20 years at Hitachi, 
Ltd. and Renesas Technology (now Renesas Electronics Corporation) and became 
independent. Floadia licenses the processes and circuit designs necessary to 
manufacture embedded non-volatile memory (memory that retains its contents even 
when the power is turned off) used in microcontrollers, power semiconductors, 
sensors, and other devices to semiconductor manufacturers as intellectual 
property (IP). Compared to competing memory technologies, Floadia's 
non-volatile memory technology consumes only 1/1,000,000 of the power required 
to write and erase data, has excellent heat resistance, and requires only 1/3 
of the additional cost to integrate into a chip. These features have already 
led to its use in automotive microcontrollers by a Japanese semiconductor 
manufacturer, and it has also been adopted by a foundry in Taiwan, where it is 
being used as embedded memory in smartphone components manufactured by the 
foundry.


Source: Floadia Corporation